(module TO-247_Horizontal_Neutral123_largePads (layer F.Cu)
  (at 0 0)
  (descr "Transistor FET TO-247 TO-218 TOP-3, 1=Gate 2=Drain 3=Source, lying horizontal, Front upward, large Pads")
  (tags "Transistor FET GDS TO-247 TO-218 TOP-3 large Pads")
  (fp_text reference REF** (at -1.016 -27.432) (layer F.SilkS)
    (effects (font (size 1 1) (thickness 0.15)))
  )
  (fp_text value TO-247_Horizontal_Neutral123_largePads (at 1.27 5.334) (layer F.Fab)
    (effects (font (size 1 1) (thickness 0.15)))
  )
  (fp_line (start -5.588 -3.302) (end -5.588 -5.08) (layer F.SilkS) (width 0.15))
  (fp_line (start 0 -3.302) (end 0 -5.08) (layer F.SilkS) (width 0.15))
  (fp_line (start 5.588 -3.302) (end 5.588 -5.08) (layer F.SilkS) (width 0.15))
  (fp_text user TO-247 (at 0.4064 -14.7066) (layer F.SilkS)
    (effects (font (size 1 1) (thickness 0.15)))
  )
  (fp_circle (center 0 -19.558) (end 1.778 -19.558) (layer F.SilkS) (width 0.15))
  (fp_line (start 8.128 -25.654) (end 8.128 -5.08) (layer F.SilkS) (width 0.15))
  (fp_line (start -8.128 -25.654) (end 8.128 -25.654) (layer F.SilkS) (width 0.15))
  (fp_line (start -8.128 -5.08) (end -8.128 -25.654) (layer F.SilkS) (width 0.15))
  (fp_line (start 8.128 -5.08) (end -8.128 -5.08) (layer F.SilkS) (width 0.15))
  (pad 2 thru_hole oval (at 0 0 90) (size 5.50164 3.50012) (drill 1.50114) (layers *.Cu *.Mask F.SilkS))
  (pad 1 thru_hole oval (at -5.588 0 90) (size 5.50164 3.50012) (drill 1.50114) (layers *.Cu *.Mask F.SilkS))
  (pad 3 thru_hole oval (at 5.588 0 90) (size 5.50164 3.50012) (drill 1.50114) (layers *.Cu *.Mask F.SilkS))
  (pad "" np_thru_hole circle (at 0 -19.558) (size 4.0005 4.0005) (drill 4.0005) (layers *.Cu *.Mask F.SilkS))
)
